Product Summary

The UPG100B is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. The UPG100B is suitable for low noise IF gain stages in microwave communication and measurement equipment.

Parametrics

UPG100B absolute maximum ratings: (1)VDD, Drain Voltage: +8V; (2)VGG, Gate Voltage: -8V; (3)VIN, Input Voltage: -3 to +0.6V; (4)PIN, Input Power: +15dBm; (5)PT, Total Power Dissipation: 1.5W; (6)Top, Operating Temperature: -65 to +125℃; (7)TSTG, Storage Temperature: -65 to +175℃.

Features

UPG100B features: (1)ultra wide band: 50 MHz to 3 GHz; (2)low noise: 2.7 dB TYP at f = 50 MHz to 3 GHz; (3)input/output impedance matched to 50 W; (4)hermetic sealed package assures high reliability; (5)wide operating temperature range.

Diagrams

UPG100B equivalent circuit

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