Product Summary

The FM24C512-GTR is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. The FM24C512-GTR provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24C512-GTR performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling.

Parametrics

FM24C512-GTR absolute maximum ratings: (1)Voltage on VDD with respect to VSS:-1.0V to +7.0V ; (2)Voltage on any signal pin with respect to VSS:-1.0V to +7.0V and VIN < VDD+1.0V; (3)Storage Temperature:-55℃ to + 125℃; (4)Lead temperature (Soldering, 10 seconds):300℃; (5)Electrostatic Discharge Voltage: Human Body Model(JEDEC Std JESD22-A114-B):4kV, Machine Model (JEDEC Std JESD22-A115-A):400V ; (6)Package Moisture Sensitivity Level:MSL-1.

Features

FM24C512-GTR features: (1)Organized as 65,536 x 8 bits; (2)High Endurance 10 Billion (1010) Read/Writes; (3)45 year Data Retention; (4)NoDelay Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 1 MHz Maximum Bus Frequency; (7)Supports Legacy Timing for 100 kHz & 400 kHz; (8)5V Operation; (9)250μA Active Current (100 kHz); (10)120μA Standby Current; (11)Industrial Temperature -40℃ to +85℃; (12)8-pin Green/RoHS EIAJ SOIC Package.

Diagrams

FM24C512-GTR block diagram

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