(China (Mainland))
Product Summary
The STS4DNF60L is a POWER MOSFET. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. The applications of the STS4DNF60L include: (1)dc motor drive; (2)dc-dc converters; (3)battery managment in nomadic equipment; (4)power managment in portable/desktop pcs.
Parametrics
STS4DNF60L absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 60 V; (2)VDGR Drain- gate Voltage (RGS = 20 kΩ): 60 V; (3)VGS Gate-source Voltage: ± 20 V; (4)ID Drain Current (continuous) at Tc = 25 ℃ Single Operation: 4 A; Drain Current (continuous) at Tc = 100 ℃ Single Operation: 2.5 A; (5)IDM Drain Current (pulsed): 16 A; (6)Ptot Total Dissipation at Tc = 25 ℃ Dual Operation: 2W; Total Dissipation at Tc = 25 ℃ Single Operation: 1.6 W.
Features
STS4DNF60L features: (1)typical rds(on) = 0.045 Ω; (2)standard outline for easy automated surface mount assembly; (3)low threshold drive.
Diagrams
| Image | Part No | Mfg | Description |  |
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 STS4DNF60L |
STMicroelectronics |
MOSFET N-Ch 60 Volt 4 Amp |
Data Sheet |
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