SI9945AEY-T1-E3

MOSFET, Dual N-Channel 60-V (D-S), ±20 V, ±3.7 A, 1.7 W, Low Power Dissipation

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PartNumber:: SI9945AEY-T1-E3

Brand:: Vishay Telefunken - Vishay | Pack: DIP | D/C: 09+

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Products Upload time: 2011-09-07

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Product Summary

The SI9945AEY-T1-E3 is a Dual N-Channel 60-V (D-S), 175℃ MOSFET.

Parametrics

SI9945AEY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 60 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current (TJ = 175℃) TA = 25℃ ID: ±3.7 A; TA = 70℃ ID: ±3.2 A; (4)Pulsed Drain Current IDM: 25 A; (5)Continuous Source Current (Diode Conduction) IS: 2 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.4 W; TA = 70℃ PD: 1.7 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 175 ℃.

Features

SI9945AEY-T1-E3 specifications: (1)Gate Threshold Voltage VGS(th): min=1.0 V; (2)Gate-Body Leakage IGSS: max=±100 nA; (3)Zero Gate Voltage Drain Current IDSS: max=1μA; (4)On-State Drain Current ID(on): min=20 A; (5)Drain-Source On-State Resistance rDS(on): typ=0.06 Ω, max=0.080 Ω; (6)Forward Transconductance gfs: typ=11 S; (7)Diode Forward Voltage VSD: max=1.2 V.