(China (Mainland))
Product Summary
The PHT11N06LT is a N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESD protection. The PHT11N06LT is intended for use in DC-DC converters and general purpose switching applications.
Parametrics
PHT11N06LT absolute maximum ratings: (1)VDS, Drain-source voltage: 55V max; (2)VDGR, Drain-gate voltage: 55V max when RGS = 20 kW; (3)±VGS, Gate-source voltage: 13 V max; (4)ID, Drain current (DC): 10.7A max when Tsp = 25℃; 4.9A max when Tamb = 25℃; (5)ID, Drain current (DC): 7.5A max when Tsp = 100℃; 3.4A max when Tamb = 100℃; (6)IDM, Drain current (pulse peak value): 42A max when Tsp = 25℃; 19A max when Tamb = 25℃; (7)Ptot, Total power dissipation: 8.3W max when Tsp = 25℃; 1.8W max when Tamb = 25℃; (8)Tstg, Tj, Storage & operating temperature: -55 to 150℃.
Features
PHT11N06LT features: (1)VDS, Drain-source voltage: 55 V; (2)ID, Drain current (DC) Tsp = 25℃: 10.7 A; Drain current (DC) Tamb = 25℃: 4.9 A; (3)Ptot, Total power dissipation: 8.3 W; (4)Tj, Junction temperature: 150℃; (5)RDS(ON), Drain-source on-state resustabce VGS=5V: 40 mW.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 PHT11N06LT |
Other |
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Data Sheet |
Negotiable |
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PHT11N06LT /T3 |
NXP Semiconductors |
MOSFET TAPE13 PWRMOS |
Data Sheet |
Negotiable |
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PHT11N06LT,135 |
NXP Semiconductors |
MOSFET TAPE13 PWRMOS |
Data Sheet |
Negotiable |
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