Product Summary

The MJD117T4G is a complementary darlington power transistor for surface mount applications. The MJD117T4G is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Parametrics

MJD117T4G absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 100 Vdc; (2)Collector-Base Voltage, VCB: 100 Vdc; (3)Emitter.Base Voltage, VEB: 5 Vdc; (4)Collector Current, Continuous, IC: 2Adc; Peak: 4Adc; (5)Base Current, IB: 50 mAdc; (6)Total Power Dissipation @ TC = 25℃, PD: 20W; Derate above 25℃: 0.16W/℃; (7)Total Power Dissipation @ TA = 25℃, PD: 1.75W; Derate above 25℃: 0.014W/℃; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: -65 to +150℃.

Features

MJD117T4G features: (1)Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); (2)Straight Lead Version in Plastic Sleeves; (3)Electrically Similar to Popular TIP31 and TIP32 Series; (4)Pb-Free Packages are Available.

Diagrams

MJD117T4G Darlington Schematic

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJD117T4G
MJD117T4G
ON Semiconductor
Transistors Darlington 2A 100V Bipolar Power PNP
Data Sheet
0-1: $0.34
1-25: $0.30
25-100: $0.22
100-500: $0.19
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJD112
MJD112
ON Semiconductor
Transistors Darlington 2A 100V Bipolar
Data Sheet
Negotiable 
MJD112/L
MJD112/L
Other

Data Sheet
Negotiable 
MJD112-001
MJD112-001
ON Semiconductor
Transistors Darlington 2A 100V Bipolar
Data Sheet
Negotiable 
MJD112-1G
MJD112-1G
ON Semiconductor
Transistors Darlington 2A 100V Bipolar Power NPN
Data Sheet
0-1: $0.32
1-25: $0.28
25-100: $0.21
100-500: $0.18
MJD112G
MJD112G
ON Semiconductor
Transistors Darlington 2A 100V Bipolar Power NPN
Data Sheet
0-1: $0.32
1-25: $0.28
25-100: $0.21
100-500: $0.18
MJD112RL
MJD112RL
ON Semiconductor
Transistors Darlington 2A 100V Bipolar
Data Sheet
Negotiable