Product Summary

The FM25640-GA is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. The FM25640-GA provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25640-GA provides substantial benefits to users of serial EEPROM, in a hardware drop-in replacement. The device uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology.

Parametrics

FM25640-GA absolute maximum ratings: (1)Power Supply Voltage with respect to VSS:-1.0V to +7.0V ; (2)Voltage on any pin with respect to VSS:-1.0V to +7.0V and VIN < VDD+1.0V ; (3)Storage Temperature:-55℃ to + 125℃ ; (4)Lead Temperature (Soldering, 10 seconds):300℃ ; (5)Electrostatic Discharge Voltage:Human Body Model (JEDEC Std JESD22-A114-B):4.5kV, Charged Device Model:(JEDEC Std JESD22-C101-A):1.25kV ; (6)Package Moisture Sensitivity Level:MSL-1.

Features

FM25640-GA features: (1)Organized as 8,192 x 8 bits; (2)High Endurance 1 Trillion (1012) Read/Writes; (3)NoDelay Writes; (4)Advanced high-reliability ferroelectric process; (5)Up to 4 MHz maximum bus frequency; (6)Direct hardware replacement for EEPROM; (7)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (8)Hardware Protection; (9)Software Protection; (10)10 μA Standby Current; (11)Automotive Temperature -40℃ to +125℃; (12)“Green”/RoHS 8-pin SOIC.

Diagrams

FM25640-GA block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FM25640-GA
FM25640-GA

Ramtron

F-RAM 64K (8Kx8) 5V Grade 1

Data Sheet

Negotiable 
FM25640-GATR
FM25640-GATR

Ramtron

F-RAM 64K (8Kx8) 5V Grade 1

Data Sheet

Negotiable